Channel formation in single-monolayer pentacene thin film transistors

نویسندگان

  • B-N Park
  • Soonjoo Seo
  • Paul G Evans
چکیده

The geometrical arrangement of single-molecule-high islands and the contact between them have large roles in determining the electrical properties of field effect transistors (FETs) based on monolayer-scale pentacene thin films. As the pentacene coverage increases through the submonolayer regime there is a percolation transition where islands come into contact and a simultaneous rapid onset of current. At coverages just above the percolation threshold, the electrical properties vary with geometrical changes in the contacts between the pentacene islands. At higher coverages, the FET mobility is much lower than the mobility measured by the van der Pauw method because of high contact resistances in monolayer-scale pentacene film devices. An increase in the van der Pauw mobility of holes as a function of pentacene coverage shows that second layer islands take part in charge transport. (Some figures in this article are in colour only in the electronic version)

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تاریخ انتشار 2007